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(R) T810-xxxB T835-xxxB HIGH PERFORMANCE TRIACS FEATURES ITRMS = 8 A SENSITIVE GATE : IGT 10mA and 35mA www..com HIGH COMMUTATION TECHNOLOGY HIGH ITSM CAPABILITY A2 DESCRIPTION The T810-xxxB and T835-xxxB series are using high performance TOPGLASS PNPN technology. These devices are intented for AC control applications, using surface mount technology where high commutating and surge performances are required (like power tools, Solid State Relay). A2 A1 DPAK (Plastic) G ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) ITSM 2 Parameter RMS on-state current (360 conduction angle) Non repetitive surge peak on-state current ( Tj initial = 25C ) I t value for fusing Critical rate of rise of on-state current IG = 50mA diG/dt = 0.1A/s 2 Value Tc =110 C tp = 8.3 ms tp = 10 ms tp = 10 ms Repetitive F = 50 Hz Non Repetitive 8 85 80 32 20 100 - 40 to + 150 - 40 to + 125 260 Unit A A A2s A/s It dI/dt Tstg Tj T Storage temperature range Operating junction temperature range Maximum temperature for soldering during 10 s C C C Symbol Parameter T810-/T835400B 600B 600 Unit VDRM VRRM Repetitive peak off-state voltage Tj = 125 C 400 V May 1998 Ed : 1A 1/5 T810-xxxB / T835-xxxB THERMAL RESISTANCES Symbol Rth (j-c) Rth (j-c) Rth (j-a) Junction to case for DC Junction to case for AC 360 conduction angle ( F= 50 Hz) Junction to ambient (S = 0.5 cm2) Parameter Value 2.1 1.6 70 Unit C/W C/W C/W GATE CHARACTERISTICS (maximum values) www..com PG(AV) = 1 W PGM= 10 W (tp = 20 s) IGM = 4 A (tp = 20 s) ELECTRICAL CHARACTERISTICS Symbol Test Conditions Quadrant T810 IGT VGT VGD IL IH * VTM * IDRM IRRM dV/dt * VD=12V (DC) RL=33 VD=12V (DC) RL=33 VD=VDRM RL=3.3k IG=1.2 IGT IT= 100mA gate open ITM= 11A tp= 380s VDRM Rated VRRM Rated Linear slope up to VD=67%VDRM gate open Tj=25C Tj=25C Tj=125C Tj=25C Tj=25C Tj=25C Tj=25C Tj=125C Tj=125C I-II-III I-II-III I-II-III I-II-III MAX MAX MIN MAX MAX MAX MAX MAX MIN 50 25 15 1.5 10 2 500 10 1.3 0.2 60 35 Suffix T835 35 mA V V mA mA V A mA V/s Unit (dI/dt)c * (dV/dt)c = 0.1V/s (dV/dt)c = 15V/s Tj=125C Tj=125C MIN MIN 5.4 2.7 9 4.5 A/ms A/ms * For either polarity of electrode A2 voltage with reference to electrode A1. ORDERING INFORMATION Add "-TR" suffix for Tape and Reel shipment T 8 10 - 600 TRIAC VOLTAGE B CURRENT SENSITIVITY PACKAGE B = DPAK 2/5 T810-xxxB / T835-xxxB Fig 1a: Maximum power dissipation versus RMS on-state current (T810 only). 10 8 6 4 2 www..com 0 0 180 Fig 1b: Maximum power dissipation versus RMS on-state current. (T835 only) 10 P(W) P(W) 8 6 4 2 180 IT(RMS)(A) 1 2 3 4 5 6 7 8 0 0 1 2 3 IT(RMS)(A) 4 5 6 7 8 Fig 2: Correlation between maximum power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink+contact. Fig 3: RMS on-state current versus ambient temperature. 10 8 6 P(W) Rth=10 C/W Rth=5C/W Tcase (C) 110 Rth=0C/W IT(RMS)(A) 9 8 7 6 5 4 3 2 1 0 115 Rth=15 C/W 4 120 2 0 0 Tamb(C) 25 50 75 100 125 125 Tamb(C) 0 25 50 75 100 125 Fig 4: Relative variation of thermal impedance junction to case versus pulse duration. Fig 5: Relative variation of gate trigger current and holding current versus junction temperature (typical values). 2.5 2.0 IGT,IH[Tj]/IGT,IH[Tj=25C] K=[Zth(j-c)/Rth(j-c)] 1.0 0.5 1.5 1.0 0.2 IGT IH 0.5 tp(s) 0.1 1E-3 1E-2 1E-1 1E+0 Tj(C) 0.0 -40 -20 0 20 40 60 80 100 120 140 3/5 T810-xxxB / T835-xxxB Fig 6: Non repetitive surge peak on-state current versus number of cycles. Fig 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponding value of I2t. ITSM(A),It(As) Tj initial=25C F=50Hz 80 70 60 50 40 ITSM(A) 500 Tj initial=25C ITSM 100 It www..com 30 20 10 0 1 Number of cycles 10 100 1000 tp(ms) 10 1 2 5 10 Fig 8: On-state characteristics (maximum values). Fig 9: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35m). Rth(j-a) (C/W) ITM(A) 100.0 Tj max.: Vto=0.8V Rt=60m 100 80 60 Tj=25C 10.0 Tj=Tj max. 40 20 1.0 VTM(V) 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 0 2 4 6 S(Cu) (cm) 8 10 12 14 16 18 20 4/5 T810-xxxB / T835-xxxB PACKAGE MECHANICAL DATA DPAK Plastic REF. DIMENSIONS Millimeters Inches Min. Typ. Max Min. Typ. Max. 2.20 2.40 0.086 0.094 0.90 1.10 0.035 0.043 0.03 0.23 0.001 0.009 0.64 0.90 0.025 0.035 5.20 5.40 0.204 0.212 0.45 0.60 0.017 0.023 0.48 0.60 0.018 0.023 6.00 6.20 0.236 0.244 6.40 6.60 0.251 0.259 4.40 4.60 0.173 0.181 9.35 10.10 0.368 0.397 0.80 0.031 0.60 1.00 0.023 0.039 0 8 0 8 E B2 C2 L2 A www..com D H L4 B G A1 C A2 0.60 MIN. V2 A A1 A2 B B2 C C2 D E G H L2 L4 V2 FOOT PRINT (millimeters) 6.7 WEIGHT : 0.30g MARKING 6.7 TYPE T810-400B MARKING T8 1040 T8 1060 T8 3540 T8 3560 6.7 3 1.6 2.3 2.3 1.6 T810-600B T835-400B T835-600B Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5 |
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